N-Channel MOSFET, 80 A, 49 V, 7-Pin TO-220 Infineon BTS282ZE3230AKSA2
- RS Stock No.:
- 1107448
- Mfr. Prt No.:
- BTS282ZE3230AKSA2
- Brand:
- Infineon

Technical Reference
Legislation and Compliance
RoHS Status: Not Applicable
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
RS stock number | 1107448 |
Product description | N-Channel MOSFET, 80 A, 49 V, 7-Pin TO-220 Infineon BTS282ZE3230AKSA2 |
Manufacturer / Brand | Infineon |
Manufacturer part number | BTS282ZE3230AKSA2 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
Date | Jun 26, 2022 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon TEMPFET™ MOSFET with Thermal Switch
The Infineon TEMPFET™ is a logic level N-channel power MOSFET with an integrated on-chip thermal sensor which will operate when the chip temperature exceeds 160°C. The anode and cathode of the temperature sensing thyristor accessible and isolated from the power MOSFET.
Specifications
Attribute | Value |
Brand | Infineon |
Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 49 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 7 |
Maximum Drain Source Resistance | 9.5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2 V |
Minimum Gate Threshold Voltage | 1.2 V |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Series | TEMPFET |
Minimum Operating Temperature | -40 °C |
Forward Diode Voltage | 1.4 V |
Maximum Operating Temperature | +175 °C |
Length | 10 mm |
Typical Gate Charge @ Vgs | 155 nC @ 10 V |
Height | 15.65 mm |
Width | 4.4 mm |
Transistor Material | Si |
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