N-Channel MOSFET, 75 A, 80 V, 3-Pin TO-220AB onsemi HUF75645P3

RS Stock No.:
1455463
Mfr. Prt No.:
HUF75645P3
Brand:
ON Semiconductor

Technical Reference

Legislation and Compliance

RoHS Certificate of Compliance

RS Components
RoHS Certificate of Compliance

EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment.

Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers.

RS definition of RoHS Compliance:

  • The product does not contain any of the restricted substances in concentrations and applications banned by the Directive,
  • and for components, the product is capable of being worked on at the higher temperatures required by lead–free soldering

The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:

SubstanceConcentration
Lead0.1%
Mercury0.1%
PBB (Polybrominated Biphenyls)0.1%
PBDE ( Polybrominated Diphenyl Ethers)0.1%
Hexavalent Chromium0.1%
Cadmium0.01%
DEHP (Bis (2-Ethylhexl) phthalate)0.1%
BBP (Benzyl butyl phthalate)0.1%
DBP (Dibutyl phthalate)0.1%
DIBP (Diisobutyl phthalate)0.1%

The supplier of the item listed below has informed RS Components that the product is "RoHS Compliant".

RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate.

Compliant Product Details
RS stock number 1455463
Product description N-Channel MOSFET, 75 A, 80 V, 3-Pin TO-220AB onsemi HUF75645P3
Manufacturer / Brand ON Semiconductor
Manufacturer part number HUF75645P3

RS Components Ltd, Birchington Road, Corby, Northants, NN17 9RS, UK

Statement of Conformity

RS Components
Statement of Conformity

This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.

Compliant Product Details
RS stock number 1455463
Product description N-Channel MOSFET, 75 A, 80 V, 3-Pin TO-220AB onsemi HUF75645P3
Manufacturer / Brand ON Semiconductor
Manufacturer part number HUF75645P3

The foregoing information relates to product sold on, or after, the date shown below.

RS COMPONENTS

Date Jul 18, 2024

RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132


Product Details

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.


Specifications

Attribute Value
Brand ON Semiconductor
Channel Type N
Maximum Continuous Drain Current 75 A
Maximum Drain Source Voltage 80 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 10 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2 V
Maximum Power Dissipation 270 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 195 nC @ 20 V
Height 16.3 mm
Width 4.7 mm
Series UltraFET
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Transistor Material Si
Length 10.67 mm
Checking stock...
IDR
1,587,195.48
Out of stock
Price Tube (1 Tube of 50)
Tube(s)Per Tube(IDR)Per Unit(IDR)
11,587,195.4831,743.91
*price per unit indicative
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