N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF Infineon IPT020N10N3ATMA1

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RoHS Status: Not Applicable

Statement of Conformity

RS Components
Statement of Conformity

This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.

Compliant Product Details
RS stock number 9064356
Product description N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF Infineon IPT020N10N3ATMA1
Manufacturer / Brand Infineon
Manufacturer part number IPT020N10N3ATMA1

The foregoing information relates to product sold on, or after, the date shown below.


Date Feb 4, 2023

RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132

Product Details

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS™3 Power MOSFETs, 100V and over


Attribute Value
Brand Infineon
Maximum Gate Source Voltage -20 V, +20 V
Mounting Type Surface Mount
Transistor Configuration Single
Forward Diode Voltage 1 V
Package Type HSOF
Maximum Drain Source Resistance 3.7 mΩ
Maximum Operating Temperature +175 °C
Length 10.58 mm
Typical Gate Charge @ Vgs 156 nC @ 10 V
Channel Type N
Height 2.4 mm
Width 10.1 mm
Channel Mode Enhancement
Maximum Power Dissipation 375 W
Number of Elements per Chip 1
Series OptiMOS 3
Minimum Operating Temperature -55 °C
Pin Count 8
Maximum Drain Source Voltage 100 V
Transistor Material Si
Maximum Continuous Drain Current 300 A
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