N-Channel MOSFET, 350 mA, 240 V, 3 + Tab-Pin SOT-223 Infineon BSP89H6327XTSA1
- RS Stock No.:
- 4452281
- Mfr. Prt No.:
- BSP89H6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Status: Non Compliant
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 4452281 |
| Product description | N-Channel MOSFET, 350 mA, 240 V, 3 + Tab-Pin SOT-223 Infineon BSP89H6327XTSA1 |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | BSP89H6327XTSA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Apr 28, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon SIPMOS® N-Channel MOSFETs
Specifications
| Attribute | Value |
| Brand | Infineon |
| Channel Type | N |
| Maximum Continuous Drain Current | 350 mA |
| Maximum Drain Source Voltage | 240 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 6 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.8 V |
| Minimum Gate Threshold Voltage | 0.8 V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5 mm |
| Width | 3.5 mm |
| Series | SIPMOS |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 4.3 nC @ 10 V |
| Height | 1.6 mm |
| Transistor Material | Si |
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